IRF7701 International Rectifier, IRF7701 Datasheet - Page 3

• Manufacturer Part Number: IRF7701
• Description: MOSFET P-CH 12V 10A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7701

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5050pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.01
100
100
0.1
0.1
10
10
1
1
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1.0
0.1
TOP
BOTTOM
-V
-V
DS
T = 25 C
VGS
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
GS
J
1.5
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
°
2.0
1
T = 150 C
J
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
DS
J
-1.0V
= -10V
°
2.5
°
3.0
10
100
0.1
10
2.0
1.5
1.0
0.5
0.0
Fig 4. Normalized On-Resistance
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-10A
DS
VGS
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
Vs. Temperature
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
0
20
40
1
60
IRF7701
20µs PULSE WIDTH
T = 150 C
-1.0V
J
80 100 120 140 160
°
V
°
GS
=
-4.5V
3
10