IRF7701 International Rectifier, IRF7701 Datasheet - Page 6

• Manufacturer Part Number: IRF7701
• Description: MOSFET P-CH 12V 10A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7701

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5050pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7701
Fig 11. Typical On-Resistance Vs. Gate
6
0.05
0.04
0.03
0.02
0.01
0.00
Fig 13a. Basic Gate Charge Waveform
V
1.5
G
Q
GS
-V GS, Gate -to -Source Voltage (V)
Voltage
2.5
Charge
Q
Q
GD
G
I D = -10A
3.5
4.5
0.020
0.015
0.010
0.005
Fig 12. Typical On-Resistance Vs. Drain
Fig 13b. Gate Charge Test Circuit
0
12V
V
GS
Same Type as D.U.T.
Current Regulator
V GS = -2.5V
.2 F
20
-I D , Drain Current (A)
50K
-3mA
Current
Current Sampling Resistors
.3 F
40
I
G
V GS = -4.5V
60
D.U.T.
I
D
www.irf.com
80
+
-
V
DS
100