IRF7433 International Rectifier, IRF7433 Datasheet

MOSFET P-CH 12V 8.9A 8-SOIC

IRF7433

Manufacturer Part Number
IRF7433
Description
MOSFET P-CH 12V 8.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7433

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 8.7A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1877pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7433TRPBF
Manufacturer:
ST
0
Part Number:
IRF7433TRPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
Thermal Resistance
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Description
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J
DS
D
D
GS
@ T
@ T
JA
, T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Gate-to-Source Voltage
Linear Derating Factor
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter

GS
GS
ƒ
ƒ
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
V
-12V
DSS
1
2
3
4
T o p V ie w
HEXFET
24m @V
30m @V
46m @V
8
7
6
5
R
-55 to +150
Max.
DS(on)
D
D
D
D
50
Max.
A
0.02
-8.9
-7.1
-12
-36
2.5
1.6
±8
®
GS
GS
GS
IRF7433
Power MOSFET
max
= -4.5V
= -2.5V
= -1.8V
SO-8
PD -94056
-
-
-
8.7A
7.4A
6.3A
Units
Units
I
W/°C
°C/W
D
°C
W
W
V
V
A
1
12/15/00

Related parts for IRF7433

IRF7433 Summary of contents

Page 1

... Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET V DSS -12V -4. -4.5V GS  ƒ ƒ ƒ PD -94056 IRF7433 ® Power MOSFET R max I DS(on) D 24m @V = -4.5V 8. 30m @V = -2.5V 7. 46m @V = -1.8V 6. SO-8 Max. Units - ...

Page 2

... IRF7433 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM -1.2V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -10V DS 0.0 2.0 2.5 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7433 VGS TOP -10.0V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V -1.2V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) -8. ...

Page 4

... IRF7433 3200 0V MHZ C iss = SHORTED 2800 C rss = C gd 2400 C oss = Ciss 2000 1600 1200 Coss 800 Crss 400 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150 C ° 0.1 0.2 0.4 0.6 0.8 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7433 D.U. µ d(off thJA ...

Page 6

... IRF7433 0.050 0.040 0.030 -8.7A 0.020 0.010 0.0 2.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.15 0.12 0.09 0.06 0.03 0 6.0 8.0 10.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 Fig 13 ...

Page 7

... Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 300 200 -250µA 100 0 75 100 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 Fig 16. Typical Power Vs. Time IRF7433 Time (sec) 7 ...

Page 8

... IRF7433 SO-8 Package Details 0.25 [.010 NOT DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. ...

Page 9

... This product has been designed and qualified for the commercial market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 0 Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.12/00 IRF7433 . . TAC Fax: (310) 252-7903 9 ...

Related keywords