IRF1405ZS International Rectifier, IRF1405ZS Datasheet

IRF1405ZS

Manufacturer Part Number

IRF1405ZS

Description

MOSFET N-CH 55V 75A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF1405ZTRL.pdf (13 pages)

Specifications of IRF1405ZS

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

4.9 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

180nC @ 10V

Input Capacitance (ciss) @ Vds

4780pF @ 25V

Power - Max

230W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF1405ZS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF1405ZS-7P

Manufacturer:

SANKEN

Quantity:

1 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF1405ZSTRL7PP

Manufacturer:

Quantity:

20 000

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Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

Features

HEXFET

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

(Tested )

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Continuous Drain Current, V

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

Ã™

Parameter

™

AUTOMOTIVE MOSFET

@ 10V

(Silicon Limited)

(Package Limited)

TO-220AB

IRF1405Z

HEXFET

See Fig.12a, 12b, 15, 16

Typ.

300 (1.6mm from case )

0.50

–––

10 lbf

IRF1405ZS

-55 to + 175

Max.

in (1.1N

150

110

600

230

± 20

270

420

1.5

Pak

IRF1405ZS

IRF1405ZL

Power MOSFET

DS(on)

IRF1405Z

Max.

DSS

0.65

–––

= 75A

PD - 94645A

= 4.9mΩ

IRF1405ZL

= 55V

TO-262

Units

W/°C

°C/W

°C

Related parts for IRF1405ZS

IRF1405ZS Summary of contents

Page 1

... Parameter 94645A IRF1405Z IRF1405ZS IRF1405ZL ® HEXFET Power MOSFET 55V DSS R = 4.9mΩ DS(on 75A Pak TO-262 IRF1405ZS IRF1405ZL Max. Units 150 110 A 75 600 230 W 1.5 W/°C ± 270 mJ 420 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Limited By Package 125 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 ...

Page 6

D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 1000 0.01 100 0.05 0. 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current vs.Pulsewidth 300 TOP Single Pulse BOTTOM 10% Duty Cycle 250 75A 200 150 100 ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...

Page 10

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" 10 INT ERNAT IONAL RECT IFIER F530S ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLECTOR 3- EMITTER 11 ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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