IRF1405ZS International Rectifier, IRF1405ZS Datasheet - Page 5

• Manufacturer Part Number: IRF1405ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405ZS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 4780pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1405ZS

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150
125
100
0.001
75
50
25
0.01
0.1
0
1
Fig 9. Maximum Drain Current vs.
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.02
0.20
0.05
0.01
0.10
50
Case Temperature
T C , Case Temperature (°C)
75
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
100
Limited By Package
125
0.0001
150
t 1 , Rectangular Pulse Duration (sec)
175
0.001
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
0.01
-60 -40 -20 0
I D = 75A
V GS = 10V
T J , Junction Temperature (°C)
vs. Temperature
0.1
20 40 60 80 100 120 140 160 180
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1
5
10