IRF1405ZS International Rectifier, IRF1405ZS Datasheet - Page 4

• Manufacturer Part Number: IRF1405ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405ZS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 4780pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1405ZS

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1.00
0.10
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100
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Forward Voltage
T J = 25°C
1.0
f = 1 MHZ
10
1.5
C oss
C rss
C iss
V GS = 0V
2.0
100
2.5
10000
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
1
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 75A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
20
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
40
10
V DS = 44V
V DS = 28V
60
10msec
100µsec
1msec
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