IRF7495TR International Rectifier, IRF7495TR Datasheet - Page 3

• Manufacturer Part Number: IRF7495TR
• Description: MOSFET N-CH 100V 7.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7495TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1530pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

www.irf.com
100
100
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
2
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
1
T J = 150°C
3
4.5V
10
20µs PULSE WIDTH
Tj = 25°C
T J = 25°C
V DS = 50V
20µs PULSE WIDTH
4
TOP
BOTTOM
100
VGS
15V
10V
8.0V
5.0V
4.5V
1000
5
100
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
10
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20 0
I D = 7.3A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
1
20 40 60 80 100 120 140 160 180
4.5V
10
20µs PULSE WIDTH
Tj = 150°C
IRF7495
TOP
BOTTOM
100
VGS
15V
10V
8.0V
5.0V
4.5V
1000
3