IRF7495TR International Rectifier, IRF7495TR Datasheet

MOSFET N-CH 100V 7.3A 8-SOIC

IRF7495TR

Manufacturer Part Number
IRF7495TR
Description
MOSFET N-CH 100V 7.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7495TR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
51nC @ 10V
Input Capacitance (ciss) @ Vds
1530pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7495TR
Manufacturer:
TOSH
Quantity:
3 831
Part Number:
IRF7495TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7495TRPBF
Quantity:
9 000
l
Benefits
l
l
l
Applications
www.irf.com
Notes  through † are on page 8
Absolute Maximum Ratings
V
V
I
I
I
P
dv/dt
T
T
Thermal Resistance
R
R
D
D
DM
J
STG
DS
GS
D
θJL
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
@T
A
A
A
= 25°C
= 100°C
= 25°C
OSS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
to Simplify Design, (See
Parameter
Parameter
h
GS
GS
@ 10V
@ 10V
e
V
100V
DSS
G
S
S
S
1
2
3
4
Top View
22m @V
Typ.
–––
–––
R
DS(on)
HEXFET
-55 to + 150
8
7
6
5
Max.
± 20
0.02
100
7.3
4.6
2.5
7.3
58
D
D
D
D
A
A
GS
max
®
= 10V
Max.
IRF7495
20
50
Power MOSFET
SO-8
7.3A
Units
Units
W/°C
°C/W
I
V/ns
°C
W
D
V
A
1
04/12/06

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IRF7495TR Summary of contents

Page 1

Applications High frequency DC-DC converters l Benefits Low Gate to Drain Charge to Reduce l Switching Losses Fully Characterized Capacitance Including l Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage l and Current Absolute ...

Page 2

IRF7495 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° 50V 20µs ...

Page 4

IRF7495 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C ...

Page 5

Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE ...

Page 6

IRF7495 10V Drain Current (A) Fig 12. On-Resistance vs. Drain Current VCC DUT 0 1K Fig 14a&b. Basic Gate Charge Test Circuit ...

Page 7

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã $Ãb%d ...

Page 8

IRF7495 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. ...

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