IRF7495TR International Rectifier, IRF7495TR Datasheet - Page 6

• Manufacturer Part Number: IRF7495TR
• Description: MOSFET N-CH 100V 7.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7495TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1530pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0
IRF7495
I
AS
Fig 15a&b. Unclamped Inductive Test circuit
6
Fig 14a&b. Basic Gate Charge Test Circuit
Fig 12. On-Resistance vs. Drain Current
25
20
15
10
1K
t p
0
V
10
DUT
(BR)DSS
and Waveforms
and Waveform
V GS = 10V
L
20
I D , Drain Current (A)
VCC
R G
30
20V
V DS
V
GS
t p
40
V
I AS
G
D.U.T
0.01 Ω
L
Q
GS
50
Q
Charge
Q
GD
G
60
15V
DRIVER
+
-
70
V DD
A
Fig 13. On-Resistance vs. Gate Voltage
500
400
300
200
100
35
30
25
20
15
10
0
Fig 15c. Maximum Avalanche Energy
25
4
Starting T J , Junction Temperature (°C)
5
V GS, Gate -to -Source Voltage (V)
6
50
vs. Drain Current
7
8
75
9 10 11 12 13 14 15 16
T J = 25°C
100
TOP
BOTTOM 4.4A
www.irf.com
I D = 4.4A
125
I D
2.0A
3.5A
150