IRF820 STMicroelectronics, IRF820 Datasheet
IRF820
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IRF820 Summary of contents
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... Applications ■ Switching application Order codes Part number IRF820 June 2006 N-channel 500V - 2.5Ω TO-220 R I DS(on) D <0.3Ω 4A Internal schematic diagram Marking IRF820 Rev 3 IRF820 PowerMesh™II MOSFET TO-220 Package Packaging TO-220 Tube 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 IRF820 ...
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... IRF820 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuos Drain current (continuos (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope T Storage temperature ...
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... ±30V 10V Parameter Test Conditions V > D(on 25V MHz 300 4.7Ω 400V 10V GS Min. Typ. Max 500 GS 50 ±100 = 250µ 1.5 A 2.5 Min. Typ. Max. DS(on)max, 3 315 2.7 6.1 IRF820 Unit V 1 µA µ Ω 3 Unit ...
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... IRF820 Table 6. Source drain diode Symbol Source-drain Current I SD Source-drain Current (1) I SDM (pulsed) (2) V Forward On Voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance IRF820 ...
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... IRF820 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...
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... Test circuit 3 Test circuit Figure 12. Unclamped Inductive load test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times 8/12 Figure 13. Unclamped inductive waveform Figure 15. Gate charge test circuit IRF820 ...
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... IRF820 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... IRF820 inch MIN. TYP. MAX. 0.173 0.181 0.024 0.034 0.045 0.066 0.019 0.027 0.60 0.620 0.393 0.409 0.094 0.106 0.194 0.202 0.048 0.052 ...
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... IRF820 5 Revision history Table 7. Revision history Date 21-Jun-2004 27-Jun-2006 Revision 2 Preliminary version 3 New template, no content change Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com IRF820 ...