IRF820 STMicroelectronics, IRF820 Datasheet - Page 5

• Manufacturer Part Number: IRF820
• Description: MOSFET N-CH 500V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of IRF820

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 315pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2733-5

IRF820
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
I
V
SDM
I
RRM
SD
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
V
SD
SD
DD
= 4 A, V
=4 A, di/dt = 100A/µs
= 100V, T
Test Conditions
GS
j
= 0
= 150°C
Min.
Electrical characteristics
Typ.
1.64
400
8.2
Max.
1.6
16
4
Unit
µC
ns
A
A
V
A
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