IRF820 STMicroelectronics, IRF820 Datasheet - Page 4

• Manufacturer Part Number: IRF820
• Description: MOSFET N-CH 500V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of IRF820

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 315pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2733-5

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
r(Voff)
DS(on)
C
GS(th)
C
Q
Q
d(on)
GSS
DSS
fs
Q
t
oss
t
rss
iss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body Leakage
Current (V
Gate threshold voltage
Static drain-source on
resistance
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
I
V
V
V
R
V
V
D
D
C
DS
DS
GS
DS
GS
DS
DS
GS
DD
DD
GS
G
= 250 µA, V
= 2A
= 125 °C
= 4.7Ω V
= max rating
= max rating,
= V
> I
= 25V, f = 1 MHz,
= ±30V
= 10V, I
= 0
= 300 V, I
= 400V, I
= 10V
Test Conditions
Test Conditions
D(on)
GS
, I
D
x R
GS
D
D
= 1.5 A
D
GS
= 250µA
= 10 V
= 4 A,
DS(on)max,
= 2 A
= 0
Min.
Min.
500
2
Typ.
Typ.
12.5
315
2.5
7.7
2.7
6.1
52
10
13
15
13
3
3
±100
Max.
Max.
50
17
4
1
3
IRF820
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S