IRF1010EZ International Rectifier, IRF1010EZ Datasheet - Page 3

• Manufacturer Part Number: IRF1010EZ
• Description: MOSFET N-CH 60V 75A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010EZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1010EZ

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10000
1000
1000
100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
4
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
6
4.5V
V DS = 25V
60µs PULSE WIDTH
7
20µs PULSE WIDTH
Tj = 25°C
10
8
9
100
10
1000
100
Fig 4. Typical Forward Transconductance
100
0.1
Fig 2. Typical Output Characteristics
10
90
80
70
60
50
40
30
20
10
1
0
0.01
0
TOP
BOTTOM
20
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
vs. Drain Current
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
40
T J = 175°C
60
T J = 25°C
1
80
20µs PULSE WIDTH
Tj = 175°C
4.5V
100
10
120
3
100
140