IRF1010EZ International Rectifier, IRF1010EZ Datasheet - Page 6

• Manufacturer Part Number: IRF1010EZ
• Description: MOSFET N-CH 60V 75A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010EZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1010EZ

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I AS
D.U.T
.3 F
0.01
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage vs. Temperature
400
350
300
250
200
150
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
0
-75 -50 -25
25
Fig 12c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
50
I D = 250µA
T J , Temperature ( °C )
vs. Drain Current
0
75
25
100
50
75
TOP
BOTTOM 51A
125
100 125 150 175
www.irf.com
150
I D
5.7A
9.1A
175