IRFB3307 International Rectifier, IRFB3307 Datasheet - Page 3

• Manufacturer Part Number: IRFB3307
• Description: MOSFET N-CH 75V 130A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3307

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 50V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB3307

www.irf.com
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100000
10000
1000
1000
1000
0.01
100
100
100
0.1
0.1
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
2
1
Fig 1. Typical Output Characteristics
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
1
4
4.5V
C oss
C rss
C iss
T J = 25°C
V DS = 25V
≤60µs PULSE WIDTH
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
10
10
6
TOP
BOTTOM
100
8
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
100
10
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
10
2.5
2.0
1.5
1.0
0.5
1
0.1
-60 -40 -20 0
0
Fig 2. Typical Output Characteristics
I D = 75A
I D = 75A
V GS = 10V
20
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
V DS = 60V
V DS = 38V
V DS = 15V
1
40
20 40 60 80 100 120 140 160 180
4.5V
60
≤ 60µs PULSE WIDTH
Tj = 175°C
10
80
TOP
BOTTOM
100
100
120
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
140
3