IRFB3307 International Rectifier, IRFB3307 Datasheet - Page 5

• Manufacturer Part Number: IRFB3307
• Description: MOSFET N-CH 75V 130A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3307

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 50V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB3307

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Fig 15. Maximum Avalanche Energy vs. Temperature
300
250
200
150
100
50
0
0.0001
25
0.001
0.01
100
0.1
0.1
10
1
1.0E-06
Starting T J , Junction Temperature (°C)
1
1E-006
50
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Duty Cycle = Single Pulse
D = 0.50
TOP
BOTTOM 1% Duty Cycle
I D = 75A
0.02
0.20
0.01
0.10
0.05
75
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
100
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
Single Pulse
1.0E-05
Fig 14. Typical Avalanche Current vs.Pulsewidth
125
0.01
0.10
0.05
150
0.0001
t 1 , Rectangular Pulse Duration (sec)
175
1.0E-04
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long as neither T
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ∆T
tav (sec)
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
Iav (max) is exceeded.
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
av
av =
thJC
D (ave)
0.001
= Allowable avalanche current.
=
τ
J
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed T
τ
J
τ
1
Ci= τi/Ri
τ
= Average power dissipation per single avalanche pulse.
1
Ci= i/Ri
av
) = Transient thermal resistance, see Figures 13)
jmax
1.0E-03
R
1
R
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 150°C
and Tstart =25°C (Single Pulse)
. This is validated for every part type.
1
τ
P
2
τ
D (ave)
R
2
0.01
2
R
2
τ
C
= 1/2 ( 1.3·BV·I
I
E
av
τ
AS (AR)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
= 2DT/ [1.3·BV·Z
av
Ri (°C/W)
1.0E-02
·f
0.2911
0.3196
= P
D (ave)
0.1
av
) = DT/ Z
·t
th
av
0.000484
0.005529
τi (sec)
]
thJC
jmax
1.0E-01
(assumed as
jmax
1
nor
5