IRFB3307 International Rectifier, IRFB3307 Datasheet - Page 4

• Manufacturer Part Number: IRFB3307
• Description: MOSFET N-CH 75V 130A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3307

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 50V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB3307

4
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
1000
140
120
100
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
10
0
1
Fig 11. Typical C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
25
0
10
T J = 175°C
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
20
75
30
T J = 25°C
OSS
100
40
Limited By Package
Stored Energy
50
125
V GS = 0V
60
150
70
175
80
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
1000
1200
1000
100
800
600
400
200
100
0.1
10
95
90
85
80
75
70
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
20 40 60 80 100 120 140 160 180
1msec
100
10
DC
10msec
TOP
BOTTOM 75A
125
100µsec
150
I D
8.6A
12A
www.irf.com
100
175