IRF1405ZS-7P International Rectifier, IRF1405ZS-7P Datasheet

IRF1405ZS-7P

Manufacturer Part Number

IRF1405ZS-7P

Description

MOSFET N-CH 55V 120A D2PAK7

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF1405ZS-7P.pdf (12 pages)

Specifications of IRF1405ZS-7P

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

4.9 mOhm @ 88A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

120A

Vgs(th) (max) @ Id

4V @ 150µA

Gate Charge (qg) @ Vgs

230nC @ 10V

Input Capacitance (ciss) @ Vds

5360pF @ 25V

Power - Max

230W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (6 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF1405ZS-7P

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF1405ZS-7P

Manufacturer:

SANKEN

Quantity:

1 000

Current page: 1 of 12
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Features

Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient

and reliable device for use in Automotive applica-

tions and a wide variety of other applications.

HEXFET

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

AUTOMOTIVE MOSFET

Parameter

@ 10V (Silicon Limited)

@ 10V (See Fig. 9)

@ 10V

(Package Limited)

300 (1.6mm from case )

HEXFET

See Fig.12a,12b,15,16

Typ.

0.50

–––

10 lbf•in (1.1N•m)

IRF1405ZS-7P

IRF1405ZL-7P

-55 to + 175

Max.

150

100

120

590

230

± 20

250

810

1.5

Power MOSFET

DS(on)

Max.

0.65

–––

DSS

= 120A

PD - 96905B

= 4.9mΩ

= 55V

Units

W/°C

°C/W

°C

‰

Related parts for IRF1405ZS-7P

IRF1405ZS-7P Summary of contents

Page 1

... HEXFET is a registered trademark of International Rectifier. www.irf.com AUTOMOTIVE MOSFET G Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Package Limited Parameter 96905B IRF1405ZS-7P IRF1405ZL-7P ® HEXFET Power MOSFET 55V DSS R = 4.9mΩ DS(on 120A D Max. Units 150 A 100 120 590 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R SMD Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss C ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 ( ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 Allowed avalanche Current vs avalanche 1 pulsewidth, tav, assuming ∆Τ 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 300 TOP Single ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

D Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) www.irf.com 9 ...

Page 10

D Pak - 7 Pin Part Marking Information 2 D Pak - 7 Pin Tape and Reel 10 IR www.irf.com ...

Page 11

TO-263CA 7 Pin Long Leads Package Outline Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. TAC Fax: (310) 252-7903 ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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