IRF1405ZS-7P International Rectifier, IRF1405ZS-7P Datasheet - Page 7

• Manufacturer Part Number: IRF1405ZS-7P
• Description: MOSFET N-CH 55V 120A D2PAK7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405ZS-7P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 5360pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1405ZS-7P

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1000
100
0.1
10
300
250
200
150
100
1.0E-06
1
50
0
Fig 16. Maximum Avalanche Energy
25
0.05
0.10
0.01
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
Starting T J , Junction Temperature (°C)
50
vs. Temperature
TOP
BOTTOM 1% Duty Cycle
I D = 88A
75
1.0E-05
100
Fig 15. Typical Avalanche Current vs.Pulsewidth
Single Pulse
125
150
1.0E-04
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
av
av =
thJC
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
1.0E-03
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
1.0E-02
D (ave)
jmax
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
jmax
1.0E-01
7
is