IRF1405ZS-7P International Rectifier, IRF1405ZS-7P Datasheet - Page 5

• Manufacturer Part Number: IRF1405ZS-7P
• Description: MOSFET N-CH 55V 120A D2PAK7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405ZS-7P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 5360pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1405ZS-7P

www.irf.com
0.0001
0.001
0.01
150
125
100
0.1
75
50
25
1
Fig 9. Maximum Drain Current vs.
1E-006
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
0.02
0.20
0.01
50
0.10
0.05
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
0.0001
t 1 , Rectangular Pulse Duration (sec)
150
175
τ
0.001
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
2.5
2.0
1.5
1.0
0.5
i/Ri
Fig 10. Normalized On-Resistance
R
-60 -40 -20 0
1
R
1
I D = 88A
V GS = 10V
τ
2
R
τ
2
2
R
T J , Junction Temperature (°C)
2
0.01
vs. Temperature
R
τ
3
3
R
τ
20 40 60 80 100 120 140 160 180
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
C
τ
Ri (°C/W) τi (sec)
0.1707
0.1923
0.2885
0.1
0.000235
0.000791
0.008193
5
1