STW18NK80Z STMicroelectronics, STW18NK80Z Datasheet
STW18NK80Z
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STW18NK80Z Summary of contents
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... Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number STW18NK80Z October 2006 N-channel 800V - 0.34Ω - 19A - TO-247 19A 350W Internal schematic diagram Marking Package W18NK80Z TO-247 Rev 4 STW18NK80Z TO-247 Packaging Tube 1/14 www.st.com 14 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STW18NK80Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ...
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... STW18NK80Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T tot Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5KΩ) ESD(G-S) (2) dv/dt Peak diode recovery voltage slope ...
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... ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 STW18NK80Z ...
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... STW18NK80Z 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) Static drain-source on R DS(on) resistance Table 6. Dynamic Symbol Forward ...
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... Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 6/14 Parameter Test conditions I = 19A 18A, di/dt = 100A/µ 40V (see Figure 15 18A, di/dt = 100A/µ 40V (see Figure 15) STW18NK80Z Min. Typ. Max 1.6 920 = 25° 1160 = 150°C 15 25.8 Unit µ µC A ...
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... STW18NK80Z 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance Electrical characteristics Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance 7/14 ...
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... Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics 8/14 Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized breakdown voltage vs temperature STW18NK80Z ...
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... STW18NK80Z 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 14. Gate charge test circuit Figure 16. Unclamped Inductive load test circuit Test circuit 9/14 ...
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... Test circuit Figure 17. Unclamped inductive waveform 10/14 Figure 18. Switching time waveform STW18NK80Z ...
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... STW18NK80Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STW18NK80Z inch MIN. TYP. MAX. 0.19 0.20 0.086 0.102 0.039 0.055 0.079 0.094 0.118 0.134 0.015 0.03 0.781 0.793 0.608 0.620 ...
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... STW18NK80Z 5 Revision history Table 8. Revision history Date 21-Jun-2004 17-Oct-2006 Revision 3 Complete document 4 New template, no content change Revision history Changes 13/14 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STW18NK80Z ...