STW18NK80Z STMicroelectronics, STW18NK80Z Datasheet - Page 3

• Manufacturer Part Number: STW18NK80Z
• Description: MOSFET N-CH 800V 19A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW18NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 6100pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4423-5

STW18NK80Z
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2. I
Table 2.
Table 3.
Table 4.
Symbol
Symbol
Rthj-case
Rthj-amb
BV
V
Symbol
SD
E
dv/dt
ESD(G-S)
I
I
AR
GSO
DM
AS
V
V
T
T
P
I
I
≤ 19A, di/dt ≤ 300A/µs, V
T
DS
GS
stg
J
D
D
tot
j
(1)
(2)
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Gate-source breakdown
voltage
Absolute maximum ratings
Thermal data
Avalanche characteristics
Gate-source zener diode
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Parameter
j
= 25 °C, I
DD
≤ V
DD
Parameter
D
Parameter
< 800V, T
= I
C
j
max)
AR
= 25°C
GS
Igs=± 1mA (open drain)
, V
= 0)
DD
j
≤ T
Test conditions
= 50 V)
C
C
JMAX
= 25°C
= 100°C
-55 to 150
Min.
30
Value
6000
± 30
800
350
2.4
4.5
19
12
76
Max value
Typ.
700
19
Electrical ratings
0.36
300
50
Max.
W/°C
V/ns
Unit
°C
W
V
A
A
V
A
V
°C/W
°C/W
Unit
Unit
mJ
°C
A
V
3/14