STW18NK80Z STMicroelectronics, STW18NK80Z Datasheet - Page 4
STW18NK80Z
Manufacturer Part Number
STW18NK80Z
Description
MOSFET N-CH 800V 19A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STW18NK80Z.pdf
(14 pages)
Specifications of STW18NK80Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
4.5V @ 150µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
6100pF @ 25V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4423-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW18NK80Z
Manufacturer:
TI
Quantity:
2 500
Electrical ratings
1.1
4/14
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
STW18NK80Z