TPC6001(TE85L,F) Toshiba, TPC6001(TE85L,F) Datasheet - Page 3

• Manufacturer Part Number: TPC6001(TE85L,F)
• Description: MOSFET N-CH 20V 6A VS-6
• Manufacturer: Toshiba

Specifications of TPC6001(TE85L,F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-6 (SOT-23-6)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC6001(TE85L); TPC6001(TE85L,F); TPC6001FTR; TPC6001TR; TPC6001TR

100
10
14
12
10
50
30
10
8
6
4
2
0
8
6
4
2
0
5
3
1
0
0
1
Common source
V DS = 10 V
Pulse test
6
4
10
0.5
0.2
Drain-source voltage V DS (V)
Gate-source voltage V GS (V)
3
100°C
Drain current I D (A)
25°C
1
5
2
0.4
2.5
I
I
|Y
D
D
fs
– V
– V
1.5
10
| – I
Ta = -55°C
1.8
GS
DS
Common source
Ta = 25°C Pulse test
100°C
Ta = -55°C
25°C
D
0.6
30
2
Common source
V DS = 10 V
Pulse test
V GS = 1.3 V
0.8
50
2.5
1.7
1.6
1.5
1.4
100
1.0
3
3
100
0.5
0.4
0.3
0.2
0.1
20
16
12
30
10
8
4
0
0
3
1
0.1
0
0
1.5 A
0.3
2.5
4.5
Drain-source voltage V DS (V)
Gate-source voltage V GS (V)
2
2
10, 8, 6
Drain current I D (A)
1
R
V
DS (ON)
4
4
I
DS
D
– V
3
– V
DS
Common source
Ta = 25°C Pulse test
GS
– I
6
6
D
10
Common source
T a = 25°C
Pulse test
I D = 6 A
Common source
Ta = 25°C
Pulse test
2 V
2.5 V
V GS = 4.5 V
3 A
V GS = 1.2 V
2
8
8
1.8
30
1.4
1.6
2002-01-17
TPC6001
100
10
10