TPC6001(TE85L,F) Toshiba, TPC6001(TE85L,F) Datasheet - Page 5

• Manufacturer Part Number: TPC6001(TE85L,F)
• Description: MOSFET N-CH 20V 6A VS-6
• Manufacturer: Toshiba

Specifications of TPC6001(TE85L,F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-6 (SOT-23-6)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC6001(TE85L); TPC6001(TE85L,F); TPC6001FTR; TPC6001TR; TPC6001TR

0.03
0.01
100
0.3
0.1
30
10
0.01
3
1
*: Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature
I D max (pulse)*
0.03
Drain-source voltage V DS (V)
0.1
1000
300
100
Safe operating area
0.3
0.1
30
10
0.001
3
1
0.3
1
10 ms*
3
0.01
V DSS max
10
1 ms*
30
Device mounted on a glass-
epoxy board (b) (Note 2b)
0.1
100
Pulse t w (s)
r
th
5
- t
1
w
Device mounted on a glass-
epoxy board (a) (Note 2a)
10
100
Single pulse
1000
2002-01-17
TPC6001