2SJ360(TE12L) Toshiba, 2SJ360(TE12L) Datasheet - Page 3

• Manufacturer Part Number: 2SJ360(TE12L)
• Description: MOSFET P-CH 60V 1A PW-MINI
• Manufacturer: Toshiba

Specifications of 2SJ360(TE12L)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 730 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 155pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: PW-MINI
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

−1.0
−0.8
−0.6
−0.4
−0.2
−2.0
−1.6
−1.2
−0.8
−0.4
0.5
0.3
10
−0.1
0
0
5
3
1
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−0.2
Drain-source voltage V DS
Gate-source voltage V GS
−1
−0.3
Drain current I D (A)
−0.5
−8
−0.4
−2
I
I
|Y
−10
D
D
Tc = −55°C
Tc = −55°C
fs
– V
– V
−1
| – I
DS
GS
−0.6
D
−3
100
−6
−3
100
−5
V GS = −2.5 V
−0.8
−4.5
(V)
(V)
−4
25
25
−4
−5
−3.5
−3
−1.0
−10
−5
3
−2.0
−1.6
−1.2
−0.8
−0.4
−2.0
−1.6
−1.2
−0.8
−0.4
0.5
0.3
10
−0.1
0
0
5
3
1
0
0
−10
Common source
Ta = 25°C
Pulse test
Drain-source voltage V DS
Gate-source voltage V GS
−8
−2
−4
−0.3
−6
−5
−3.8
−4
Drain current I D (A)
−0.5
R
−3.5
V GS = −4 V
−4
V
−8
DS (ON)
I
DS
D
– V
−1
– V
−3.3
DS
GS
−10
– I
−12
−6
D
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
−3
V GS = −2.5 V
−3
−16
(V)
(V)
−8
I D = −2 A
−2.8
−5
2009-09-29
−0.5
−1.5
−1.0
2SJ360
−10
−20
−10