2SK3565 Toshiba, 2SK3565 Datasheet

MOSFET N-CH 900V 5A TO-220SIS

2SK3565

Manufacturer Part Number
2SK3565
Description
MOSFET N-CH 900V 5A TO-220SIS
Manufacturer
Toshiba
Datasheets

Specifications of 2SK3565

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1150pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220 (SIS)
Transistor Polarity
N Channel
Continuous Drain Current Id
5A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
2.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3565
Manufacturer:
IXYS
Quantity:
7 000
Part Number:
2SK3565
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
= 90 V, T
GS
DC
Pulse (t = 1 ms)
DSS
= 20 kΩ)
th
ch
= 2.0 to 4.0 V (V
= 25°C(Initial), L = 43.6 mH, I
(Note 1)
(Note 1)
(Note 2)
= 100 μA (V
DS (ON)
fs
(Ta = 25°C)
| = 4.5 S (typ.)
Symbol
DS
V
V
V
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
DS
R
R
D
2SK3565
= 720 V)
Symbol
th (ch-a)
th (ch-c)
= 2.0 Ω (typ.)
= 10 V, I
-55~150
D
Rating
900
900
±30
595
150
4.5
AR
= 1 mA)
15
45
5
5
1
Max
2.78
62.5
= 5.0 A, R
Unit
mJ
mJ
°C
°C
°C/W
°C/W
W
V
V
V
A
A
Unit
G
= 25 Ω
Weight : 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
1
1: Gate
2: Drain
3: Source
2-10U1B
SC-67
2009-09-29
2SK3565
2
3
Unit: mm

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2SK3565 Summary of contents

Page 1

... Symbol Rating Unit V 900 V DSS V 900 V DGR ± GSS 595 4 150 ° -55~150 °C stg Symbol Max Unit R 2.78 °C/W th (ch-c) R 62.5 °C/W th (ch- 2SK3565 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ Ω 2009-09-29 Unit ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SK3565 Min Typ. Max ⎯ ⎯ ...

Page 3

... DRAIN CURRENT I ( COMMON 5.5 SOURCE 5. 25°C 5 PULSE TEST 4. (V) DRAIN-SOURCE VOLTAGE (V) GATE-SOURCE VOLTAGE V 10 COMMON SOURCE Tc = 25°C PULSE TEST 0.01 DRAIN CURRENT I 3 2SK3565 I – 5.5 5. – COMMON SOURCE Tc = 25℃ PULSE TEST 1 ( – (ON V、15V 0 (A) D ...

Page 4

... C iss oss 2 COMMON SOURCE rss PULSE TEST 0 −80 − 100 (V) CASE TEMPERATURE Tc (°C) DS 500 400 300 200 100 0 160 200 0 TOTAL GATE CHARGE Q 4 2SK3565 I – 25° − −0.4 −0.8 −1.2 −1.6 ( – 120 160 DYNAMIC INPUT / OUTPUT CHARACTERISTICS 100 V 12 ...

Page 5

... 1m 10m 100m PULSE WIDTH t (s) w 1000 800 600 400 200 10000 CHANNEL TEMPERATURE (INITIAL) ( −15 V TEST CIRCUIT = 25 Ω 43.6mH 2SK3565 Duty = t/T Duty = t (ch-c) = 2.78°C (ch-c) = 1.25°C – 100 125 150 T (° VDSS WAVE FORM ⎛ ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3565 2009-09-29 ...

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