2SK3565 Toshiba, 2SK3565 Datasheet - Page 2

• Manufacturer Part Number: 2SK3565
• Description: MOSFET N-CH 900V 5A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3565

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220 (SIS)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 2.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3565
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
Note 4: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
V
I
V
I
V
V
V
V
V
G
D
Duty ≤ 1%, t
GS
DS
DS
GS
DS
DS
DD
V
=±10 μA, V
= 10 mA, V
GS
I
I
dI
DR
DR
= 720 V, V
= 10 V, I
= 20 V, I
= 25 V, V
10 V
= ±25 V, V
= 10 V, I
∼ − 400 V, V
DR
0 V
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
2
= 5 A, V
= 5 A, V
(Ta = 25°C)
/dt = 100 A/μs
50 Ω
Test Condition
D
D
D
w
DS
GS
GS
Test Condition
GS
= 1 mA
= 3 A
DS
= 3 A
GS
= 10 μs
GS
GS
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 10 V, I
I
= 0 V
= 0 V,
D
⎯
⎯
= 3 A
V
DD
D
= 5 A
R
∼ − 200 V
V
L
OUT
66.7 Ω
=
900
Min
±30
Min
2.0
2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1150
Typ.
Typ.
100
170
900
2.0
4.5
5.4
20
30
70
60
28
17
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2009-09-29
2SK3565
−1.7
Max
Max
±10
100
4.0
2.5
⎯
⎯
⎯
⎯
⎯
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V