2SK2614(Q) Toshiba, 2SK2614(Q) Datasheet - Page 2
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2SK2614(Q)
Manufacturer Part Number
2SK2614(Q)
Description
MOSFET N-CH 50V 20A 2-7B1B
Manufacturer
Toshiba
Datasheet
1.2SK2614TE16L1Q.pdf
(6 pages)
Specifications of 2SK2614(Q)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
2-7B1B
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.046 Ohms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SK2614(Q)
2SK2614Q
2SK2614Q
Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate-source
plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K2614
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Part No.
(or abbreviation code)
Lot No.
Note 3
(Note 1)
(Note 1)
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
Q
t
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
Note 3 : A line under a Lot No. identifies the indication of product Labels
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
V
V
I
V
V
V
V
V
Duty ≤ 1%, t
V
I
I
D
DR
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
GS
= 10 mA, V
10 V
= 20 A, V
= 20 A, V
= 50 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
≈ 40 V, V
0 V
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
D
2
w
(Ta = 25°C)
D
D
D
GS
GS
GS
Test Condition
GS
= 5 A
GS
GS
Test Condition
= 10 μs
= 1 mA
= 10 A
DS
= 10 A
= 0 V
= 0 V, dI
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
—
—
I
D
V
DD
= 10 A
DR
D
≈ 30 V
= 20 A
/ dt = 50 A / μs
V
OUT
Min
Min
0.8
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
0.055
0.032
Typ.
Typ.
900
130
370
100
—
—
—
—
13
15
25
30
25
19
—
—
—
60
45
6
2009-12-21
0.046
2SK2614
Max
0.08
Max
−1.7
±10
100
2.0
20
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
Ω
S
A
A
V