SPW47N60S5 Infineon Technologies, SPW47N60S5 Datasheet - Page 4

• Manufacturer Part Number: SPW47N60S5
• Description: MOSFET N-CH 650V 47A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW47N60S5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5.5V @ 2.7mA
• Gate Charge (qg) @ Vgs: 286nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 415W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW47N60S5IN

Power dissipation
P
Safe operating area
I
parameter: D=0.01, T
D
tot
=f (V
10
= f (T
10
10
10
500
400
350
300
250
200
150
100
W
A
50
-1
0
2
1
0
10
DS
0
SPW47N60S5
SPW47N60S5
-1
C
)
20
)
40
10
0
60
C
=25°C
80
10
1
100
120
10
2
°C
DC
T
V
V
C
t p = 1.7µs
DS
160
10 µs
100 µs
1 ms
10 ms
10
Final data
3
4
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
A
55
45
40
35
30
25
20
15
10
= f (t
-1
-2
-3
-4
5
0
1
0
10
0
C
SPW47N60S5
SPW47N60S5
-7
)
p
20
10
)
single pulse
GS
-6
40
10
p
10 V
/T
-5
60
10
-4
80
10
SPW47N60S5
100
-3
10
120
-2
D = 0.50
2002-07-26
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
C
160
10
0