SPW47N60S5 Infineon Technologies, SPW47N60S5 Datasheet - Page 7

• Manufacturer Part Number: SPW47N60S5
• Description: MOSFET N-CH 650V 47A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW47N60S5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5.5V @ 2.7mA
• Gate Charge (qg) @ Vgs: 286nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 415W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW47N60S5IN

Forward characteristics of reverse diode
I
parameter: T j , t
F
= f (V
10
10
10
10
A
-1
2
1
0
0
SPW47N60S5
SD
)
0.4
0.8
p
= 10 µs
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
2
2.4 V
V
SD
3
Final data
7
Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPW47N60S5
40
Gate
Dpuls
80
)
120 160 200 240 280
= 47 A
0,2
V
DS max
SPW47N60S5
0,8 V
2002-07-26
DS max
nC
Q
g
360