SPD07N60S5 Infineon Technologies, SPD07N60S5 Datasheet - Page 2

• Manufacturer Part Number: SPD07N60S5
• Description: MOSFET N-CH 600V 7.3A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD07N60S5

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 5.5V @ 350µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 970pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: SP000313948; SPD07N60S5INTR

*) TO252: reflow soldering, MSL3; TO251: wavesoldering
Maximum Ratings
Parameter
Drain Source voltage slope
V
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
Soldering temperature, *)
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T j=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage V
Drain-Source avalanche
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance R
Gate input resistance
Rev. 2.5
DS
= 480 V, I
2
cooling area
D
= 7.3 A, T
j
2)
= 125 °C
V
V
I
I
R
Symbol
DSS
GSS
(BR)DSS V
(BR)DS
GS(th)
DS(on)
G
Page 2
V
I
V
T
T
V
V
T
T
f =1MHz, open Drain
D
j
j
j
j
GS
GS
DS
GS
GS
=25°C,
=150°C
=25°C
=150°C
=350 µΑ , V
Conditions
=600V, V
=0V, I
=0V, I
=20V, V
=10V, I
Symbol
d v /d t
Symbol
R
R
R
T
D
D
=0.25mA
=7.3A
sold
thJC
thJA
thJA
D
DS
GS
GS
=4.6A,
=0V
=V
=0V,
DS
min.
min.
600
3.5
-
-
-
-
-
-
-
-
-
-
-
-
Values
Values
Value
0.54
1.46
typ.
typ.
700
4.5
0.5
20
19
-
-
-
-
-
-
-
-
SPU07N60S5
SPD07N60S5
2008-04-10
max.
max.
260
100
100
1.5
5.5
0.6
75
75
50
1
-
-
-
-
Unit
V/ns
Unit
K/W
°C
Unit
V
µA
nA
Ω