SPD07N60S5 Infineon Technologies, SPD07N60S5 Datasheet - Page 3

• Manufacturer Part Number: SPD07N60S5
• Description: MOSFET N-CH 600V 7.3A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD07N60S5

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 5.5V @ 350µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 970pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: SP000313948; SPD07N60S5INTR

Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Repetitve avalanche causes additional power losses that can be calculated as P
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3 C
4 C
Rev. 2.5
Electrical Characteristics , at T
Parameter
Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
3)
4)
Q
Q
Q
V
g
C
C
C
C
C
t
t
t
t
Symbol
d(on)
r
d(off)
f
j
(plateau)
fs
gs
gd
g
iss
oss
rss
o(er)
o(tr)
= 25 °C, unless otherwise specified
V
V
V
V
V
I
V
f=1MHz
V
V
V
I
Page 3
D
D
DD
DD
GS
DD
DS
GS
GS
DS
DD
=4.6A
=7.3A, R
=350V, I
=350V, I
=0 to 10V
=350V, I
≥ 2* I
=0V to 480V
=0V, V
=0V,
=350V, V
Conditions
D
* R
G
DS
DS(on)max
=12 Ω
D
D
D
GS
=25V,
=7.3A
=7.3A,
=7.3A
=0/10V,
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
AR
Values
16.5
typ.
970
370
120
170
7.5
*f.
27
10
30
55
40
20
8
4
SPU07N60S5
SPD07N60S5
2008-04-10
max.
255
35
30
-
-
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
pF
ns
DSS
DSS
.
.