BSO201SP Infineon Technologies, BSO201SP Datasheet - Page 6

• Manufacturer Part Number: BSO201SP
• Description: MOSFET P-CH 20V 14.9A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO201SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 14.9A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 128nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5962pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 m Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 14.9 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: BSO201SPINTR; SP000012578

9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
Rev.1.2
DS(on)
mΩ
pF
10
10
12
10
9
8
7
6
5
-60
4
3
0
DS
= f(T j )
)
D
-20
GS
= -14.9 A, V
5
=0, f=1 MHz
20
10
98%
typ.
60
Ciss
GS
Coss
Crss
= -4.5 V
100
V
°C
T
- V
j
DS
160
20
Page 6
12 Forward character. of reverse diode
I
parameter: T j , t
10 Gate threshold voltage
V
parameter: V
F
GS(th)
= f (V
-10
-10
-10
-10
1.6
V
1.2
0.8
0.6
0.4
0.2
A
-1
1
0
-60
2
1
0
0
BSO201SP
= f (T j )
SD
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
, I
98%
typ.
2%
-1.6
D
60
= -250 µA
-2
BSO201SP
100
2001-12-21
-2.4
°C
V
V
T
SD
j
160
-3