BSO201SP Infineon Technologies, BSO201SP Datasheet - Page 7
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BSO201SP
Manufacturer Part Number
BSO201SP
Description
MOSFET P-CH 20V 14.9A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSO201SP.pdf
(8 pages)
Specifications of BSO201SP
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 14.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
14.9A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
128nC @ 4.5V
Input Capacitance (ciss) @ Vds
5962pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
8 m Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
- 14.9 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Other names
BSO201SPINTR
SP000012578
SP000012578
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO201SP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSO201SP H
Manufacturer:
TI
Quantity:
22 500
Part Number:
BSO201SP H
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO201SPH
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
13 Typ. avalanche energy
E
V
15 Drain-source breakdown voltage
V
AS
DD
(BR)DSS
Rev.1.2
-24.5
-23.5
-22.5
-21.5
-20.5
-19.5
-18.5
mJ
250
150
100
= f (T
-23
-22
-21
-20
-19
-18
= -10 V, R
V
50
0
-60
25
BSO201SP
j
= f (T
), par.: I
-20
50
GS
j
)
20
D
= 25 Ω
= -14.9 A
75
60
100
100
°C
°C
T
T
j
j
180
150
Page 7
14 Typ. gate charge
|V
parameter: I
GS
| = f (Q
V
12
8
6
4
2
0
0
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
20
Gate
D
= -14.9 A pulsed
40
)
60
80
100
BSO201SP
2001-12-21
nC
|Q Gate |
140