BSO301SP Infineon Technologies, BSO301SP Datasheet - Page 6

• Manufacturer Part Number: BSO301SP
• Description: MOSFET P-CH 30V 12.6A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO301SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 136nC @ 10V
• Input Capacitance (ciss) @ Vds: 5890pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14.9 A
• Power Dissipation: 1790 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: BSO301SPINTR

Rev. 1.31
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
12
10
4
3
2
DS
=f(T
8
6
4
2
0
10000
1000
100
0
-60
); V
j
); I
GS
D
5
-20
=0 V; f =1 MHz
=-14.9 A; V
10
98 %
20
Crss
-V
Ciss
Coss
T
GS
DS
j
15
60
=-10 V
[°C]
[V]
typ.
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
100
2.5
1.5
0.5
0.1
10
=f(T
SD
2
1
0
1
-60
)
0
j
); V
j
GS
-20
=V
DS
0.5
20
150 °C, typ
; I
D
=-250 µA
min.
-V
T
max.
typ.
j
SD
60
[°C]
[V]
25 °C, 98%
100
1
25 °C, typ
150 °C, 98%
BSO301SP H
140
2010-02-08
180
1.5