BSO301SP Infineon Technologies, BSO301SP Datasheet - Page 7

• Manufacturer Part Number: BSO301SP
• Description: MOSFET P-CH 30V 12.6A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO301SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 136nC @ 10V
• Input Capacitance (ciss) @ Vds: 5890pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14.9 A
• Power Dissipation: 1790 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: BSO301SPINTR

Rev. 1.31
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
36
34
32
30
28
26
24
22
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=-250 µA
10
20
t
T
AV
j
60
[°C]
[µs]
C °125
100
100
C °100
140
C °25
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
9
8
7
6
5
4
3
2
1
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
20
=-14.9 A pulsed
g s
40
-Q
Q
gate
g
Q
60
6
sw
[nC]
Q
15
g d
24
80
BSO301SP H
100
Q
g ate
2010-02-08
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