BSO303SP Infineon Technologies, BSO303SP Datasheet - Page 3

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BSO303SP

Manufacturer Part Number
BSO303SP
Description
MOSFET P-CH 30V 8.9A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO303SP

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
2V @ 100µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
1754pF @ 25V
Power - Max
2.35W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
31 m Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 8.9 A
Power Dissipation
2.35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO303SPINTR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO303SP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO303SP H
Manufacturer:
INFINEON/英飞凌
Quantity:
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Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev.1.2
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
Page 3
çV
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
GS
DD
DD
DD
GS
DD
A
GS
R
F
=-7.1A
=-1A, R
DS
=25°C
=-15V, |I
/dt=100A/µs
=0, V
=-15V, V
=-24V, I
=-24V, I
=0 to -10V
=-24V, I
=0, |I F | = |I D |
ç≥2*çI
Conditions
DS
G
D
=6Ω
F
D
D
D
ç*R
=-25V,
|
GS
=-8.9A
=-8.9A,
=-8.9A
=
DS(on)max
|l
=-10V,
D
|,
min.
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1754
-15.8
-0.87
10.3
12.5
40.3
11.7
typ.
465
389
-4.1
-2.4
-46
24
53
25
-
-
BSO303SP
2002-01-08
max.
-35.6
-1.09 V
15.5
60.5
17.6
-6.2
-3.5
-26
-69
19
80
37
-
-
-
-
-
Unit
S
pF
ns
nC
V
A
ns
nC

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