BSO303SP Infineon Technologies, BSO303SP Datasheet - Page 5

• Manufacturer Part Number: BSO303SP
• Description: MOSFET P-CH 30V 8.9A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 1754pF @ 25V
• Power - Max: 2.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 31 m Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 8.9 A
• Power Dissipation: 2.35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO303SPINTR

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
Rev.1.2
A
A
30
20
15
10
40
30
25
20
15
10
5
0
5
0
0
0
DS
GS
0.5
); T
1
); |V
p
p
= 80 µs
= 80 µs
j
=25°C
DS
1
2
|≥ 2 x |I
Vgs= - 4V
Vgs= - 4.5V
Vgs= - 5V
Vgs= - 6V
Vgs= - 10V
1.5
3
2
4
D
| x R
2.5
5
DS(on)max
Vgs= - 3.5V
3
Vgs= -2.5V
Vgs= -3V
6
V
- V
- V
V
DS
GS
7.5
Page 5
4
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: t p = 80 µs
fs
DS(on)
= f(I
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Ω
0.1
S
40
30
25
20
15
10
0
5
0
0
0
D
Vgs = - 3V
Vgs = - 3.5V
Vgs = - 4V
Vgs = - 4.5V
Vgs= - 5V
Vgs = - 5.5V
Vgs = - 6V
Vgs = - 8V
Vgs = - 10V
= f (I
); T
2
5
j
=25°C
D
GS
4
)
10
6
15
8
20
10
12
25
BSO303SP
14
2002-01-08
30
16
A
- I
- I
A
D
D
40
20