SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet

MOSFET N-CH 800V 6A DPAK

SPD06N80C3

Manufacturer Part Number
SPD06N80C3
Description
MOSFET N-CH 800V 6A DPAK
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPD06N80C3

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
900 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3.9V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
785pF @ 100V
Power - Max
83W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
900mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Fall Time
8 ns
Rise Time
15 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SO000318350
SP000077606
SPD06N80C3INTR
SPD06N80C3T
SPD06N80C3XT
SPD06N80C3XTINTR
SPD06N80C3XTINTR

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Rev. 2.4
CoolMOS
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
CoolMOS
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Type
SPD06N80C3
TM
TM
800V designed for:
Power Transistor
2)
Package
PG-TO252-3
j
=25 °C, unless otherwise specified
AR
AR
1)
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
Marking
06N80C3
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
D
D
A
A
A
A
DS
=1.2 A, V
=6 A, V
page 1
=25 °C
=100 °C
=25 °C
=25 °C
=0…640 V
DD
DD
=50 V
Product Summary
V
R
Q
=50 V
DS
DS(on)max
g,typ
@ T
j
= 25°C
-55 ... 150
Value
230
±20
±30
3.8
0.2
18
50
83
PG-TO252-3
6
6
SPD06N80C3
800
0.9
31
2008-10-15
Unit
A
mJ
A
V/ns
V
W
°C
V
nC

Related parts for SPD06N80C3

SPD06N80C3 Summary of contents

Page 1

... Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse =1 2), = 2), /dt V =0…640 static >1 Hz =25 °C tot stg page 1 SPD06N80C3 Product Summary 25°C DS(on)max j Q g,typ PG-TO252-3 Value 6 3.8 18 =50 V 230 0 ±20 ±30 83 -55 ... 150 800 V 0 Unit V/ °C 2008-10-15 ...

Page 2

... I =0.25 mA GS(th =800 DSS T =25 ° =800 =150 ° = GSS = =3 DS(on) T =25 ° = =3 =150 ° MHz, open drain G page 2 SPD06N80C3 Value Values min. typ. max 1 cooling - 260 800 - - 870 2 100 - 0.78 0.9 - 2.1 - 1.2 Unit A V/ns Unit K/W - ° ...

Page 3

... = 25°C d(off =640 plateau =25 ° =400 /dt =100 A/µ rrm < <T , identical low side and high side switch peak (BR)DSS j jmax while V oss while V oss page 3 SPD06N80C3 Values Unit min. typ. max. - 785 - 5 1 520 - µ * rising from DSS. is rising from DSS ...

Page 4

... Rev. 2.4 2 Safe operating area I =f parameter 100 100 125 125 150 150 4 Typ. output characteristics I =f parameter page 4 SPD06N80C3 ); T =25 ° limited by on-state limited by on-state resistance resistance 100 100 V V [V] [ =25 °C; t =10 µ 6 5 [V] [ µs 1 µ ...

Page 5

... 5.5 V 5.5 V 2.6 2.6 2.2 2.2 1.8 1.8 1.4 1 [V] [V] 8 Typ. transfer characteristics I =f parameter typ typ 100 100 140 140 180 180 page 5 SPD06N80C3 ); T =150 ° 5 4 [A] [ |>2 =10 µ DS(on)max 150 °C 150 ° [V] [V] GS ...

Page 6

... Drain-source breakdown voltage V BR(DSS) 960 960 920 920 880 880 840 840 800 800 760 760 720 720 680 680 100 100 125 125 150 150 page 6 SPD06N80C3 ); t =10 µ °C 25 °C 150 °C 150 ° 0.5 0 1.5 1 [ =0. ...

Page 7

... Typ. capacitances C =f MHz Ciss Coss 1 10 Crss 100 200 V DS Rev. 2.4 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] page 7 SPD06N80C3 ) DS 100 200 300 400 500 600 V [V] DS 700 800 2008-10-15 ...

Page 8

... Definition of diode switching characteristics Rev. 2.4 page 8 SPD06N80C3 2008-10-15 ...

Page 9

... PG-TO252-3: Outline Rev. 2.4 page 9 SPD06N80C3 2008-10-15 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 10 SPD06N80C3 2008-10-15 ...

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