SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet - Page 2

• Manufacturer Part Number: SPD06N80C3
• Description: MOSFET N-CH 800V 6A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N80C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3.9V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 100V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 8 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SO000318350; SP000077606; SPD06N80C3INTR; SPD06N80C3T; SPD06N80C3XT; SPD06N80C3XTINTR; SPD06N80C3XTINTR

Rev. 2.4
Maximum ratings, at T
Parameter
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature, reflow
soldering
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
2)
4)
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
I
I
dv /dt
Symbol Conditions
R
R
T
V
V
V
I
I
R
R
S
S,pulse
DSS
GSS
sold
(BR)DSS
(BR)DS
GS(th)
thJC
thJA
DS(on)
G
T
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm
area
reflow MSL1
V
V
V
V
T
V
T
V
V
T
V
T
f =1 MHz, open drain
A
j
j
j
j
GS
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
page 2
=25 °C
=0 V, I
=0 V, I
=V
=800 V, V
=800 V, V
=20 V, V
=10 V, I
=10 V, I
5)
GS
, I
D
D
D
=250 µA
=6 A
D
D
=0.25 mA
DS
=3.8 A,
=3.8 A,
2
GS
GS
=0 V
cooling
=0 V,
=0 V,
min.
800
2.1
-
-
-
-
-
-
-
-
-
-
-
Values
Value
0.78
typ.
870
2.1
1.2
18
35
50
6
4
3
-
-
-
-
-
-
SPD06N80C3
max.
260
100
1.5
3.9
0.9
62
10
-
-
-
-
-
-
2008-10-15
Unit
A
V/ns
Unit
K/W
°C
V
µA
nA