MTD6N15T4 ON Semiconductor, MTD6N15T4 Datasheet
MTD6N15T4
Manufacturer Part Number
MTD6N15T4
Description
MOSFET N-CH 150V 6A DPAK
Manufacturer
ON Semiconductor
Datasheet
1.MTD6N15T4G.pdf
(6 pages)
Specifications of MTD6N15T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MTD6N15T4OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTD6N15T4
Manufacturer:
MOT/ON
Quantity:
12 500
Part Number:
MTD6N15T4
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MTD6N15T4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MTD6N15T4G
Manufacturer:
ON/安森美
Quantity:
20 000
MTD6N15
Power Field Effect Transistor
DPAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
switching applications such as switching regulators, converters,
solenoid and relay drivers.
Features
•
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 4
MAXIMUM RATINGS
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
Total Power Dissipation @ T
Derate above 25°C
Total Power Dissipation @ T
Derate above 25°C (Note 1)
Total Power Dissipation @ T
(Note 1)
Derate above 25°C (Note 2)
Operating and Storage Junction
Temperature Range
Thermal Resistance
Drain Current − Continuous
Drain Current
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
This TMOS Power FET is designed for high speed, low loss power
Silicon Gate for Fast Switching Speeds
Low R
Rugged — SOA is Power Dissipation Limited
Source−to−Drain Diode Characterized for Use With Inductive Loads
Low Drive Requirement — V
Surface Mount Package on 16 mm Tape
Pb−Free Package is Available
pad size.
DS(on)
− Continuous
− Non−Repetitive (t
Characteristic
− Pulsed
— 0.3 W Max
Rating
GS
= 1.0 MW)
A
A
C
p
= 25°C
= 25°C
= 25°C
≤ 50 ms)
GS(th)
= 4.0 V Max
Symbol
Symbol
T
V
V
V
R
R
R
J
V
I
P
P
P
DGR
GSM
, T
DSS
DM
I
qJC
qJA
qJA
GS
D
D
D
D
stg
−65 to +150
Value
Value
0.014
± 20
± 40
0.16
1.25
0.01
1.75
6.25
71.4
150
150
100
6.0
20
20
1
W/°C
W/°C
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Vpk
Adc
°C
W
W
W
†For information on tape and reel specifications,
MTD6N15T4
MTD6N15T4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
(BR)DSS
150 V
Device
ORDERING INFORMATION
Y
WW
6N15
G
G
& PIN ASSIGNMENTS
MARKING DIAGRAM
http://onsemi.com
Gate
(Surface Mount)
1
R
1 2
N−CHANNEL
CASE 369C
= Year
= Work Week
= Device Code
= Pb−Free Package
(Pb−Free)
Package
DS(on)
STYLE 2
4 Drain
DPAK
DPAK
DPAK
0.3 W
Drain
D
3
2
Publication Order Number:
MAX
S
4
3
Source
2500/Tape & Reel
2500/Tape & Reel
Shipping
MTD6N15/D
I
D
6.0 A
MAX
†
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MTD6N15T4 Summary of contents
Page 1
... Pb−Free Package ORDERING INFORMATION Device Package Shipping MTD6N15T4 DPAK 2500/Tape & Reel MTD6N15T4G DPAK 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc Zero Gate Voltage Drain Current (V = Rated Vdc) DS DSS 125°C J Gate−Body Leakage Current, Forward (V ...
Page 3
TYPICAL ELECTRICAL CHARACTERISTICS DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 2. On−Region Characteristics 14 V ...
Page 4
R LIMIT 0.5 DS(on) THERMAL LIMIT PACKAGE LIMIT 0.2 0 25° SINGLE PULSE GS 0.05 0.03 0.3 0.5 0 ...
Page 5
400 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Capacitance Variation V in PULSE GENERATOR gen ...
Page 6
... G 0.13 (0.005) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...