MTD6N15T4 ON Semiconductor, MTD6N15T4 Datasheet - Page 5

• Manufacturer Part Number: MTD6N15T4
• Description: MOSFET N-CH 150V 6A DPAK
• Manufacturer: ON Semiconductor

Specifications of MTD6N15T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTD6N15T4OSCT

R
PULSE GENERATOR
gen
1600
1200
2000
800
400
0
15
Figure 13. Switching Test Circuit
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
V
50 W
DS
= 0
Figure 11. Capacitance Variation
5
V
GS
0
V
z = 50 W
DS
5
10
V
in
50 W
15
R
L
20
V
DD
DUT
RESISTIVE SWITCHING
T
V
25
J
GS
V
C
= 25°C
C
C
out
oss
rss
= 0
iss
http://onsemi.com
30
MTD6N15
35
INPUT, V
OUTPUT, V
INVERTED
5
in
t
d(on)
16
12
8
0
4
out
0
10%
T
I
D
J
Figure 14. Switching Waveforms
= 6 A
= 25°C
V
t
on
Figure 12. Gate Charge versus
50%
DS
4
10%
= 50 V
Gate−To−Source Voltage
Q
g
, TOTAL GATE CHARGE (nC)
t
r
PULSE WIDTH
90%
75 V
8
t
d(off)
12
120 V
90%
t
50%
off
90%
16
t
f
20