NTD20N03L27-001 ON Semiconductor, NTD20N03L27-001 Datasheet - Page 2

• Manufacturer Part Number: NTD20N03L27-001
• Description: MOSFET N-CH 30V 20A TO-251A
• Manufacturer: ON Semiconductor

Specifications of NTD20N03L27-001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 10A, 5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 18.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 1260pF @ 25V
• Power - Max: 1.75W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.027 Ohms
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTD20N03L27-001OS

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTD20N03L27G
NTD20N03L27−1G
NTD20N03L27T4G
Drain−to−Source Breakdown Voltage (Note 2)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage (Note 2)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 2)
Static Drain−to−Source On−Voltage (Note 2)
Forward Transconductance (Note 2) (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
GS
GS
= 30 Vdc, V
= 30 Vdc, V
= V
= 0 Vdc, I
= 4.0 Vdc, I
= 5.0 Vdc, I
= 5.0 Vdc, I
= 5.0 Vdc, I
GS
, I
D
D
= 250 mAdc)
= 250 mAdc)
D
D
D
D
GS
GS
Device
= 10 Adc)
= 10 Adc)
= 20 Adc)
= 10 Adc, T
= 0 Vdc)
= 0 Vdc, T
Characteristic
GS
J
J
= 150°C)
=150°C)
= ± 20 Vdc, V
(I
DS
(T
S
(I
S
= 20 Adc, V
C
= 5.0 Vdc, I
= 20 Adc, V
(V
= 25°C unless otherwise noted)
(V
(V
dl
(I
DS
DD
DS
V
S
S
DS
R
/dt = 100 A/ms) (Note 2)
GS
=15 Adc, V
= 25 Vdc, V
G
= 20 Vdc, I
= 48 Vdc, I
V
= 0 Vdc)
= 10 Vdc) (Note 2)
= 9.1 W) (Note 2)
f = 1.0 MHz)
GS
GS
D
= 5.0 Vdc,
GS
= 10 Adc)
http://onsemi.com
= 0 Vdc, T
= 0 Vdc) (Note 2)
GS
D
D
GS
= 20 Adc,
= 15 Adc,
= 0 Vdc,
= 0 Vdc,
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
DPAK−3
DPAK
DPAK
2
J
= 125°C)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
DS(on)
C
V
GS(th)
C
g
d(on)
d(off)
DSS
GSS
Q
Q
Q
t
t
t
FS
oss
t
t
SD
rss
RR
iss
rr
a
b
r
f
T
1
2
Min
1.0
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2500 Tape & Reel
75 Units/Rail
75 Units/Rail
0.017
1005
0.48
0.40
13.8
Typ
271
137
Shipping
1.6
5.0
2.8
6.6
1.0
0.9
43
28
23
21
87
17
38
31
23
13
10
−
−
−
−
±100
1260
†
Max
0.54
18.9
1.15
100
420
112
160
2.0
10
31
27
25
45
40
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
mW
nC
mC
pF
ns
ns