NTD20N03L27-001 ON Semiconductor, NTD20N03L27-001 Datasheet - Page 4

MOSFET N-CH 30V 20A TO-251A

NTD20N03L27-001

Manufacturer Part Number
NTD20N03L27-001
Description
MOSFET N-CH 30V 20A TO-251A
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD20N03L27-001

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 10A, 5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
18.9nC @ 10V
Input Capacitance (ciss) @ Vds
1260pF @ 25V
Power - Max
1.75W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.027 Ohms
Forward Transconductance Gfs (max / Min)
21 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
74 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NTD20N03L27-001OS
1500
1000
1000
2500
100
200
500
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
1
0
10
1
Figure 9. Resistive Switching Time Variation
8 6
t
t
d(on)
d(off)
4
Figure 7. Capacitance Variation
t
t
f
r
V
GS
2 0
R
G
− V
vs. Gate Resistance
, GATE RESISTANCE (W)
DS
2
C
4
rss
6
10
8
300
250
200
150
100
350
50
10 12
0
25
C
C
iss
oss
Figure 11. Maximum Avalanche Energy vs.
14
T
J
, STARTING JUNCTION TEMPERATURE (°C)
V
I
V
T
16 18 20 23
D
J
DS
GS
= 20 A
= 25°C
Starting Junction Temperature
50
= 20 V
= 5.0 V
http://onsemi.com
100
25
75
4
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0.0
100
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Drain−to−Source Voltage vs. Total Charge
J
0.1
GS
Q
= 25°C
I
1
D
V
2
= 0 V
SD
= 24 A
0.2
125
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
0.3
4
0.4
150
6
Q
2
0.5
Q
8
0.6
0.7
10
V
GS
0.8
I
T
D
J
= 20 A
12
= 25°C
0.9
1.0
14

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