NTD20N03L27-001 ON Semiconductor, NTD20N03L27-001 Datasheet - Page 3

• Manufacturer Part Number: NTD20N03L27-001
• Description: MOSFET N-CH 30V 20A TO-251A
• Manufacturer: ON Semiconductor

Specifications of NTD20N03L27-001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 10A, 5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 18.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 1260pF @ 25V
• Power - Max: 1.75W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.027 Ohms
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTD20N03L27-001OS

0.035
0.025
0.015
0.005
1.6
1.4
1.2
0.8
0.6
0.03
0.02
0.01
0.04
40
35
30
25
20
15
10
1
5
0
−50
0
0
2
I
V
Figure 3. On−Resistance vs. Drain Current and
D
V
GS
V
GS
0.2
= 10 A
GS
Figure 5. On−Resistance Variation with
−25
5
Figure 1. On−Region Characteristics
= 5 V
−V
= 8 V
V
= 5 V
GS
DS
0.4
T
8
J
, DRAIN−TO−SOURCE VOLTAGE (V)
= 10 V
, JUNCTION TEMPERATURE (°C)
0
I
12
D
0.6
, DRAIN CURRENT (AMPS)
15
25
Temperature
0.8
Temperature
T
J
T
T
18
T
= 25°C
J
J
J
V
V
50
= 100°C
1
= −55°C
= 25°C
GS
GS
22
= 5 V
= 6 V
1.2
V
75
25
GS
= 4.5 V
1.4
28 32
100
V
V
V
GS
GS
V
GS
1.6
GS
= 3.5 V
= 2.5 V
= 3 V
125
= 4 V
http://onsemi.com
35
1.8
38
150
2
3
0.025
0.015
1000
0.03
0.02
0.01
100
40
36
32
28
24
20
16
12
10
8
4
0
1
0.5
0
0
Figure 4. On−Resistance vs. Drain Current and
V
T
Figure 6. Drain−to−Source Leakage Current
V
J
GS
DS
3
1
= 25°C
4
= 0 V
−V
> = 10 V
−V
Figure 2. Transfer Characteristics
DS
GS
1.5
8
6
T
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 25°C
, DRAIN CURRENT (AMPS)
12
9
2
T
Gate Voltage
J
12
16
vs. Voltage
T
T
= 100°C
2.5
J
J
= 125°C
= 100°C
V
V
15
GS
20
GS
= 5 V
= 10 V
T
3
J
18
24
= −55°C
3.5
21
28
4
24
32
4.5
36
27
40
30
5