BSP149 E6906 Infineon Technologies, BSP149 E6906 Datasheet - Page 3

• Manufacturer Part Number: BSP149 E6906
• Description: MOSFET N-CH 200V 660MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP149 E6906

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 660mA
• Vgs(th) (max) @ Id: 1V @ 400µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 430pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP149E6906T; SP000055414

Rev. 1.2
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
I
V
I
V
T
V
T
V
di
D
D
A
j
GS
DD
GS
DD
GS
GS
R
=0.50 A, R
=0.05 A,
=25 °C
F
page 3
=25 °C
=100 V, I
/dt =100 A/µs
=-3 V, V
=100 V,
=-2…7 V,
=160 V,
=-3 to 5 V
=-3 V, I
F
F
DS
=0.66 A,
G
=0.5 A,
=6
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.74
0.16
typ.
326
5.1
3.4
5.6
0.9
41
17
45
21
11
42
60
-
-
max.
0.66
430
7.7
5.1
1.0
8.4
2.6
1.2
55
25
68
31
14
65
90
-
BSP149
2005-11-28
Unit
pF
ns
nC
V
A
V
ns
nC