BSP149 E6906 Infineon Technologies, BSP149 E6906 Datasheet - Page 7

• Manufacturer Part Number: BSP149 E6906
• Description: MOSFET N-CH 200V 660MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP149 E6906

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 660mA
• Vgs(th) (max) @ Id: 1V @ 400µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 430pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP149E6906T; SP000055414

Rev. 1.2
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
V
F
0.12 A
=f(V
BR(DSS)
0.01
240
200
160
0.1
10
SD
1
=f(T
-60
)
0
25 °C, 98%
j
); I
j
-20
D
=250 µA
0.5
150 °C
20
V
T
150 °C,
98%
SD
j
60
1
[°C]
[V]
25 °C, 98%
25 °C
100
1.5
140
180
2
page 7
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-1
-2
-3
-4
5
4
3
2
1
0
0
gate
); I
DD
D
2
=0.5 A pulsed
4
Q
gate
0.2 VDS(max)
6
[nC]
8
0.8 VDS(max)
0.5 VDS(max)
10
2005-11-28
BSP149
12