BSP297 E6327 Infineon Technologies, BSP297 E6327 Datasheet
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Manufacturer Part Number
BSP297 E6327
Description
MOSFET N-CH 200V 660MA SOT-223
Manufacturer
Infineon Technologies
Specifications of BSP297 E6327
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.8 Ohm @ 660mA, 10v
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
660mA
Vgs(th) (max) @ Id
1.8V @ 400µA
Gate Charge (qg) @ Vgs
16.1nC @ 10V
Input Capacitance (ciss) @ Vds
357pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSP297E6327T SP000011108
Feature
· N-Channel
· Enhancement mode
· Logic Level
· dv/dt rated
SIPMOS Ò Small-Signal-Transistor
Type
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
ESD (JESD22-A114-HBM)
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
•
BSP297
Pb-free
Yes
S
A
A
A
A
Pb-free lead plating; RoHS compliant
=0.66A, V
Qualified according to AEC Q101
=25°C
=70°C
=25°C
=25°C
DS
=160V, di/dt=200A/µs, T
Package
PG-SOT223
j
= 25 °C, unless otherwise specified
Tape and Reel Information
L6327: 1000 pcs/reel
jmax
=150°C
Rev. 2.1
Page 1
Symbol
I
I
dv/dt
V
P
T
D
D puls
j ,
GS
tot
T
stg
1B (>500V, <1000V)
BSP297
Marking
-55... +150
55/150/56
Product Summary
V
R
I
D
Value
DS
DS(on)
0.66
0.53
2.64
±20
1.8
6
Packaging
Non dry
PG-SOT223
4
2009-08-18
0.66
200
1.8
BSP297
1
Unit
A
kV/µs
V
W
°C
2
VPS05163
V
W
A
3
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BSP297 E6327 Summary of contents
SIPMOS Ò Small-Signal-Transistor Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated • Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package PG-SOT223 BSP297 Pb-free Yes Maximum Ratings Parameter Continuous drain ...
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
Power dissipation tot A BSP297 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area parameter ...
Typ. output characteristic parameter ° 1.3 3.4V A 3.8V 4V 1.1 4. 10V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 ...
Drain-source on-state resistance DS(on) j parameter : BSP297 8 98% 2 typ 1 0 -60 - Typ. capacitances C = ...
Typ. gate charge parameter 0.66 A pulsed BSP297 0 max 0 max 6 0 max 4 ...
Rev. 2.1 Page 8 BSP297 2009-08-18 ...
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