BSP297 E6327 Infineon Technologies, BSP297 E6327 Datasheet - Page 7

• Manufacturer Part Number: BSP297 E6327
• Description: MOSFET N-CH 200V 660MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP297 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 660mA
• Vgs(th) (max) @ Id: 1.8V @ 400µA
• Gate Charge (qg) @ Vgs: 16.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 357pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP297E6327T; SP000011108

13 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSP297
0.2 V
0.5 V
0.8 V
I
D
2
G
DS max
DS max
DS max
= 0.66 A pulsed, T
); parameter: V
4
6
8
10
12
DS
14
j
= 25 °C
,
16 nC
Q
Rev. 2.1
G
20
Page 7
14 Drain-source breakdown voltage
V
(BR)DSS
245
235
230
225
220
215
210
205
200
195
190
185
180
V
-60
BSP297
= f (T
-20
j
)
20
60
100
2000-08-18
BSP297
°C
T
j
180